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HN1B26FS
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
HN1B26FS
General-Purpose Amplifier Applications
1.00.05
Unit: mm
0.10.05 0.35 0.35 0.80.05 0.10.05 0.150.05
Q1 * High voltage and high current : VCEO = 50 V, IC = 100 mA (max) * * Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) High hFE
: hFE = 120~400
1.00.05
0.70.05
1 2 3
6 5 4 0.10.05
* *
Excellent hFE linearity : hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = -0.95 (typ.) High hFE
: hFE = 120~400
0.48
: VCEO = -50 V, IC = -100 mA (max)
+0.02 -0.04
Q2 * High voltage and high current
Q1 Absolute Maximum Ratings (Ta = 25C)
Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Symbol VCBO VCEO VEBO IC IB Rating 60 50 5 100 30 Unit V V V mA mA
fS6
1.EMITTER1 2.BASE1 3.COLLECTOR2 4.EMITTER2 5.BASE2 6.COLLECTOR1 2-1F1D
(E1) (B1) (C2) (E2) (B2) (C1)
JEDEC JEITA TOSHIBA
Weight: 0.0008 g (typ.)
Q2 Absolute Maximum Ratings (Ta = 25C)
Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Symbol VCBO VCEO VEBO IC IB Rating -50 -50 -5 -100 -30 Unit V V V mA mA
Q1, Q2 Common Absolute Maximum Ratings (Ta = 25C)
Characteristic Collector power dissipation Junction temperature Storage temperature range Symbol PC Tj Tstg Rating 50* 150 -55~150 Unit mW C C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). *: Total rating
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Q1 Electrical Characteristics (Ta = 25C)
Characteristic Collector cutoff current Emitter cutoff current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol ICBO IEBO hFE (Note) VCE (sat) fT Cob Test Condition VCB = 60 V, IE = 0 VEB = 5 V, IC = 0 VCE = 6 V, IC = 2 mA IC = 100 mA, IB = 10 mA VCE = 10 V, IC = 1 mA VCB = 10 V, IE = 0, f = 1 MHz Min 120 60 Typ. 0.1 0.95 Max 0.1 0.1 400 0.25 Unit A A V MHz pF
Q2 Electrical Characteristics (Ta = 25C)
Characteristic Collector cutoff current Emitter cutoff current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol ICBO IEBO hFE (Note) VCE (sat) fT Cob Test Condition VCB = -50 V, IE = 0 VEB = -5 V, IC = 0 VCE = -6 V, IC = -2 mA IC = -100 mA, IB = -10 mA VCE = -10 V, IC = -1 mA VCB = -10 V, IE = 0, f = 1 MHz Min 120 80 Typ. -0.18 1.6 Max -0.1 -0.1 400 -0.3 Unit A A V MHz pF
Note: hFE classification Y (F): 120~240, GR (H): 200~400 ( ) marking symbol
Marking
(top view)
Type name hFE Rank
Equivalent Circuit
6
5
4
TF
Q1
Q2
1
2
3
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Q1
IC - VCE 120 2.0 COLLECTOR CURRENT IC (mA) 100 80 60 40 20 COMMON EMITTERTa = 25C 0 0 1 2 3 4 5 6 7 COLLECTOR-EMITTER VOLTAGE VCE (V) 10 0.1 1 10 100 COLLECTOR CURRENT IC (mA) 1.5 1.0 0.7 0.5 0.3 0.2 IB=0.1mA DC CURRENT GAIN hFE 1000 Ta = 100C 25 hFE - IC
100
-25
COMMON EMITTER VCE = 6V VCE = 1V
VCE(sat) - IC 1 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) COMMON EMITTER IC/IB = 10 10
VBE(sat) - IC COMMON EMITTER IC/ IB = 10
25 1 -25
0.1 25
Ta = 100C
Ta = 100C
-25
0.01 0.1 1 10 100 COLLECTOR CURRENT IC (mA)
0.1 0.1 1 10 100 COLLECTOR CURRENT IC (mA)
IB - VBE 1000
BASE CURRENT IB (A)
100
Ta = 100C
10
25
-25
1 COMMON EMITTER VCE = 6V 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4
BASE-EMITTER VOLTAGE VBE (V)
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Q2
IC - VCE
-120 -2.0 -100 COLLECTOR CURRENT IC (mA) -80 -60 -40 -20 IB = -0.1mA 0 -0 0 -0 -1 -2 -3 -4 -5 -6 -7 COLLECTOR-EMITTER VOLTAGE VCE (V) VCE(sat) - IC -1 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COMMON EMITTER IC/IB = 10 BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) -10 COMMON EMITTER IC/IB = 10 10 -0.1 1000 COMMON EMITTERTa = 25C DC CURRENT GAIN hFE -1.5 Ta = 100C 25
hFE - IC
-1.0 -0.7 -0.5 -0.3 -0.2
100
-25
COMMON EMITTER VCE = -6V VCE = -1V
-1
-10
-100
COLLECTOR CURRENT IC (mA) VBE(sat) - IC
-0.1 Ta = 100C
-1
-25
25 -25 -0.01 -0.1
25
Ta = 100C
-1
-10
-100
-0.1 -0.1
-1
-10
-100
COLLECTOR CURRENT IC (mA)
COLLECTOR CURRENT IC (mA)
IB - VBE -1000
BASE CURRENT IB (uA)
-100 Ta = 100C -10 -25
25
-1 COMMON EMITTER VCE = -6V -0.1 0 -0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 -1.4 BASE-EMITTER VOLTAGE VBE (V)
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Q1, Q2 COMMON
PC*- Ta COLLECTOR POWER DISSIPATION PC (mV) 100 90 80 70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 140 160
AMBIENT TEMPERATURE Ta (C)
*: Total rating
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RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
20070701-EN GENERAL
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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